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Número de pieza | BLF574XRS | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BLF574XR; BLF574XRS
Power LDMOS transistor
Rev. 1 — 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF574 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
Table 1. Application information
Test signal
f
(MHz)
CW 225
pulsed RF
225
VDS
PL
Gp
(V) (W) (dB)
50 600 23.5
50 600 24
D
(%)
74.5
74.7
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page NXP Semiconductors
BLF574XR; BLF574XRS
Power LDMOS transistor
7.3 Test circuit
PP
PP
&
&
&
&
&
&
7
5
& &
&
& &
5 5
PP
/ /
&
& &
5
&
& &
& 5
/ /
&
&
& &
&
&
&
7
&
& &
PP
PP
PP
PP
DDD
Fig 3.
Printed-Circuit Board (PCB) Rogers 5880: r = 2.2 F/m; thickness = 0.79 mm; thickness copper plating = 35 m.
See Table 10 for a list of components.
Component layout for class-AB production test circuit
Table 10. List of components
For test circuit see Figure 3.
Component
Description
Value
C1, C2, C3, C10, multilayer ceramic chip capacitor 1 nF
C11, C17, C18
C4, C5
multilayer ceramic chip capacitor 62 pF
C6, C7
multilayer ceramic chip capacitor 51 pF
C8, C9
multilayer ceramic chip capacitor 4.7 F, 50 V
C12, C13
C14, C16
C15
C19, C20
C21, C22
C23
C24, C25
C26, C27
C28
L1, L2
L3, L4
R1
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 43 pF
multilayer ceramic chip capacitor 20 pF
multilayer ceramic chip capacitor 4.7 F; 100 V
electrolytic capacitor
470 F; 63 V
multilayer ceramic chip capacitor 5 12 pF
multilayer ceramic chip capacitor 4 16 pF
multilayer ceramic chip capacitor 2 510 pF
multilayer ceramic chip capacitor 56 pF
2 turn 1 mm copper wire
D = 3 mm,
length = 3 mm
3 turn 1 mm copper wire
D = 3 mm,
length = 3 mm
chip resistor
0
Remarks
[1]
[1]
[1]
Kemet
C1210X475K5RAC-T4
[2]
[1]
[1]
[3]
[3]
[3]
[1]
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
5 of 14
5 Page NXP Semiconductors
BLF574XR; BLF574XRS
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 11. Abbreviations
Acronym
Description
CW Continuous Wave
ESD
ElectroStatic Discharge
HF High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
MTF
Median Time to Failure
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
XR eXtremely Rugged
11. Revision history
Table 12. Revision history
Document ID
Release date
BLF574XR_BLF574XRS v.1 20130620
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet BLF574XRS.PDF ] |
Número de pieza | Descripción | Fabricantes |
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BLF574XRS | Power LDMOS transistor | NXP Semiconductors |
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