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Número de pieza | BLF578XRS | |
Descripción | Power LDMOS transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! BLF578XR; BLF578XRS
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF578 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
Table 1. Application information
Test signal
pulsed RF
f
(MHz)
225
VDS
PL
(V) (W)
50 1400
Gp
(dB)
23.5
D
(%)
69
1.2 Features and benefits
Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 40 mA, a tp of 100 s with of 20 %:
Output power = 1400 W
Power gain = 23.5 dB
Efficiency = 69 %
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page NXP Semiconductors
BLF578XR; BLF578XRS
Power LDMOS transistor
&RVV
S)
DDD
9'69
Fig 2.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF578XR and BLF578XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 40 mA; PL = 1400 W pulsed; f = 225 MHz.
7.2 Impedance information
gate 1
Zi
gate 2
Fig 3. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 1400 W.
f Zi
ZL
(MHz)
()
()
225 2.36 j2.78
2.45 + j0.86
BLF578XR_BLF578XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
5 of 15
5 Page NXP Semiconductors
BLF578XR; BLF578XRS
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1 D
U1
H1
12
w2 D
c
H U2
L
34
b
e
w3
E1 E
Q
Dimensions
0 5 10 mm
scale
Unit(1) A b c D D1 E E1 e F H H1 L Q U1 U2 w2 w3
max 4.7
mm nom
min 4.2
11.81 0.18 31.55 31.52 9.5
11.56 0.10 30.94 30.96 9.3
9.53 1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.25
9.27 1.50 16.10 25.27 2.97 2.01 32.13 10.03
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom
0.54
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
0.25
0.01
sot539b_po
Outline
version
References
IEC
JEDEC
JEITA
SOT539B
European
projection
Issue date
12-05-02
13-05-24
Fig 13. Package outline SOT539B
BLF578XR_BLF578XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
11 of 15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet BLF578XRS.PDF ] |
Número de pieza | Descripción | Fabricantes |
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BLF578XRS | Power LDMOS transistor | NXP Semiconductors |
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