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PDF BLF647PS Data sheet ( Hoja de datos )
| Número de pieza | BLF647PS | |
| Descripción | Broadband power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLF647PS
Broadband power LDMOS transistor
Rev. 2 — 18 November 2013
Product data sheet
1. Product profile
1.1 General description
A 200 W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1. Application information
RF performance at Th = 25 C in a common source test circuit.
Test signal
f
VDS IDq PL(AV)
(MHz)
(V) (A) (W)
Pulsed, class-B 1300
32 0.1 -
CW, class-B
1300
32 0.1 200
2-tone, class-AB f1 = 1299.95; f2 = 1300.05 32 0.7 75
PL(M)
(W)
200
-
-
Gp
(dB)
17.5
17.5
19
D IMD3
(%) (dBc)
70 -
70 -
48 33
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1500 MHz frequency range
Industrial applications in the HF to 1500 MHz frequency range
1 page  
NXP Semiconductors
BLF647PS
Broadband power LDMOS transistor
Table 9. List of components
Printed-Circuit Board (PCB): RF 35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m.
See Figure 1 and Figure 2.
Component Description
Value
Remarks
C1, C2, C3 multilayer ceramic chip capacitor 68 pF
[1]
C4, C5
multilayer ceramic chip capacitor 4.7 F, 50 V
C6
multilayer ceramic chip capacitor 2.4 pF
[2]
C7, C8
multilayer ceramic chip capacitor 4.7 pF
[1]
C11
multilayer ceramic chip capacitor 3.3 pF
[3]
C12
multilayer ceramic chip capacitor 2.4 pF
[3]
C13, C14
multilayer ceramic chip capacitor 3.3 pF
[3]
C15, C16
multilayer ceramic chip capacitor 1.2 pF
[3]
C17, C18
multilayer ceramic chip capacitor 4.7 F, 50 V
C19, C20, C21 multilayer ceramic chip capacitor 220 pF
[3]
C22, C23
electrolytic capacitor
470 F, 63 V
L1 microstrip
(L W) 4 mm 1.7 mm
L2, L3
microstrip
(L W) 22.5 mm 1.6 mm
L4, L5
microstrip
(L W) 16.5 mm 15 mm
L11, L12
microstrip
(L W) 8.5 mm 15 mm
L13, L14
microstrip
(L W) 26 mm 4.2 mm
L15 microstrip
(L W) 4 mm 1.7 mm
R1, R2
SMD resistor
5.6
SMD1206
R3, R4
wire resistor
100
T1 semi rigid coax
25 , 40 mm Micro-Coax UT-090C-25
T2 semi rigid coax
25 , 40 mm Micro-Coax UT-141C-25
[1] American Technical Ceramics type 800A or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
[3] American Technical Ceramics type 800B or capacitor of same quality.
BLF647PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 November 2013
© NXP B.V. 2013. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BLF647PS
Broadband power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 10. Abbreviations
Acronym
Description
CW Continuous Wave
ESD
ElectroStatic Discharge
HF High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
SMD
Surface Mounted Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11. Revision history
Document ID
Release date Data sheet status
Change notice Supersedes
BLF647PS v.2
Modifications:
20131118
Product data sheet
-
BLF647P_BLF647PS v.1
• This document now only describes the BLF647PS product.
• Table 1 on page 1: table has been updated
• Section 1.2 on page 1: some items have been removed
• Table 4 on page 2: table has been updated
• Table 5 on page 2: typical value has been changed to 0.34
• Table 6 on page 3: table has been updated
• Table 8 on page 3: table has been updated
• Section 7 on page 3: section has been added
• Section 7.1 on page 3: section has been moved to Section 7
• Section 9 on page 11: section has been added
BLF647P_BLF647PS v.1 20120803
Objective data sheet -
-
BLF647PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 18 November 2013
© NXP B.V. 2013. All rights reserved.
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