BLF884P Datasheet PDF - NXP Semiconductors
| Part Number | BLF884P | |
| Description | UHF power LDMOS transistor | |
| Manufacturers | NXP Semiconductors | |
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BLF884P; BLF884PS
UHF power LDMOS transistor
Rev. 2 — 16 December 2011
Product data sheet
1. Product profile
1.1 General description
A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial
applications. The excellent ruggedness of this device makes it ideal for digital and analog
transmitter applications.
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f
PL(AV) PL(M) Gp
D IMD3 IMDshldr
(MHz)
(W) (W) (dB) (%) (dBc) (dBc)
RF performance in a common source 860 MHz narrowband test circuit
2-tone, class-AB
DVB-T (8k OFDM)
f1 = 860; f2 = 860.1 150
858 70
-
-
21 46 32 -
21 33 -
31[1]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858
70 -
20 32 -
32 [1]
PAR
(dB)
-
8.2 [2]
8.0 [2]
[1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
1.2 Features and benefits
Excellent ruggedness
Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
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NXP Semiconductors
7. Application information
7.1 Broadband RF figures
7.1.1 DVB-T
24
Gp
(dB)
20
001aao029
-10
Gp IMDshldr
(dBc)
-20
16
IMDshldr
-30
12 -40
BLF884P; BLF884PS
UHF power LDMOS transistor
9.5
PAR
(dB)
8.5
7.5
6.5
PAR
001aao030
50
ηD
(%)
40
30
ηD
20
8 -50
400 500 600 700 800 900
f (MHz)
Fig 2.
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T power gain and intermodulation
distortion shoulder as function of frequency;
typical values
5.5 10
400 500 600 700 800 900
f (MHz)
Fig 3.
PL(AV) = 70 W; VDS = 50 V; IDq = 0.65 A; measured in a
common source broadband test circuit as described in
Section 8.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
BLF884P_BLF884PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 December 2011
© NXP B.V. 2011. All rights reserved.
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Featured Datasheets
| Part Number | Description | MFRS |
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