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부품번호 | BLF8G27LS-150GV 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 17 페이지수
BLF8G27LS-150V;
BLF8G27LS-150GV
Power LDMOS transistor
Rev. 3 — 26 June 2013
Product data sheet
1. Product profile
1.1 General description
150W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18 30 30[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz.
Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (60 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Design optimized for gull-wing
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
NXP Semiconductors
BLF8G27LS-150(G)V
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance
Measured load-pull data; IDq = 1300 mA; VDS = 28 V.
f ZS[1]
(MHz)
()
BLF8G27LS-150V
2500
0.70 j3.50
2600
1.10 j4.40
2700
2.00 j4.90
BLF8G27LS-150GV
2500
1.00 j5.70
2600
1.50 j6.90
2700
2.10 j8.00
[1] ZS and ZL defined in Figure 1.
ZL[1]
()
2.68 j1.86
2.86 j2.03
3.27 j1.87
2.35 j4.04
2.52 j4.32
3.21 j4.36
gate
ZS
Fig 1. Definition of transistor impedance
drain
ZL
001aaf059
BLF8G27LS-150V_8G27LS-150GV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 June 2013
© NXP B.V. 2013. All rights reserved.
4 of 17
4페이지 NXP Semiconductors
BLF8G27LS-150(G)V
Power LDMOS transistor
7.4.2 IS-95
*S
G%
DDD
Ș'
DDD
3/G%P
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 5. Power gain as a function of output power;
typical values
$&35N
G%F
DDD
3/G%P
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 6. Drain efficiency as a function of output power;
typical values
$&35N
G%F
DDD
3/G%P
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 7. Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
3/G%P
VDS = 28 V; IDq = 1300 mA.
(1) f = 2605 MHz
(2) f = 2655 MHz
(3) f = 2695 MHz
Fig 8. Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
BLF8G27LS-150V_8G27LS-150GV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 26 June 2013
© NXP B.V. 2013. All rights reserved.
7 of 17
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BLF8G27LS-150GV | Power LDMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |