BLF9G20LS-160V Datasheet PDF - NXP Semiconductors
| Part Number | BLF9G20LS-160V | |
| Description | Power LDMOS transistor | |
| Manufacturers | NXP Semiconductors | |
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BLF9G20LS-160V
Power LDMOS transistor
Rev. 2 — 21 May 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1805 to 1880
800 28 35.5 19.8 33.5 28 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Excellent broadband performance
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifier for multi systems base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range
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NXP Semiconductors
BLF9G20LS-160V
Power LDMOS transistor
Table 9. List of components
See Figure 2 for component layout.
Component
Description
C1, C2
multilayer ceramic chip capacitor
C3, C4, C5
multilayer ceramic chip capacitor
C6, C8, C10, C11, C12 multilayer ceramic chip capacitor
C7, C9
multilayer ceramic chip capacitor
C13, C14
electrolytic capacitor
R1 SMD resistor
7.4 Graphical data
7.4.1 CW
Value
20 pF
20 F
10 F, 50 V
0.1 F, 50 V
2200 F, 63 V
9.1 , 12 W
Remarks
ATC 800B
ATC 600F
Murata
Murata
SMD 0805
*S
G%
DDD
Ș'
Ș'
*S
3/ :
VDS = 28 V; IDq = 800 mA.
(1) f = 1805 MHz
(2) f = 1842.5 MHz
(3) f = 1880 MHz
Fig 3. Power gain and drain efficiency as function of output power; typical values
BLF9G20LS-160V
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 21 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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