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PDF IRHMK57260SE Data sheet ( Hoja de datos )
| Número de pieza | IRHMK57260SE | |
| Descripción | RADIATION HARDENED POWER MOSFET | |
| Fabricantes | International Rectifier | |
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PD-96915
RADIATION HARDENED
IRHMK57260SE
POWER MOSFET
200V, N-CHANNEL
SURFACE MOUNT (Low-Ohmic TO-254AA)
5 TECHNOLOGY
Product Summary
Part Number
Radiation Level
IRHMK57260SE 100K Rads (Si)
RDS(on)
0.044Ω
ID
45A
Low-Ohmic
TO-254AA Tabless
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
45
29
180
208
1.67
±20
256
45
20.8
19.8
-55 to 150
300 (for 5s)
8.0 (Typical)
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
12/24/04
1 page  
Pre-Irradiation
IRHMK57260SE
10000
8000
6000
4000
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
CCrossss
=
=
CCgdds
+
Cgd
Ciss
Coss
2000
Crss
0
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = 45A
16
VDS = 160V
VVDDSS
=
=
100V
40V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 40 80 120 160 200
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
10
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0 10
10ms
100 1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRHMK57260SE.PDF ] | |
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