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IRHMS57064 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRHMS57064은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IRHMS57064 기능
기능 RADIATION HARDENED POWER MOSFET
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IRHMS57064 데이터시트, 핀배열, 회로
PD-95838C
IRHMS57064
RADIATION HARDENED
JANSR2N7470T1
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/698
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57064 100K Rads (Si) 0.006645A* JANSR2N7470T1
IRHMS53064 300K Rads (Si) 0.006645A* JANSF2N7470T1
IRHMS54064 500K Rads (Si) 0.006645A* JANSG2N7470T1
IRHMS58064 1000K Rads (Si) 0.006645A* JANSH2N7470T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
45*
45* A
180
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
824
45
20
4.3
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/19/11




IRHMS57064 pdf, 반도체, 판매, 대치품
IRHMS57064, JANSR2N7470T1
Pre-Irradiation
1000
100
10
VGS
TOP
15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
1
0.1
0.1
4.0V
60µs PULSE WIDTH
Tj = 25°C
1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 1. Typical Output Characteristics
1000
100
VGS
TOP
15V
12V
10V
7.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
10 4.0V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
10
TJ = 150°C
TJ = 25°C
1
0.1
4
VDS
6s
= 25V
PUL1S5E
WIDTH
4.5 5 5.5 6 6.5
VGS, Gate-to-Source Voltage (V)
7
Fig 3. Typical Transfer Characteristics
4
2.0
ID = 45A
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com

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IRHMS57064 전자부품, 판매, 대치품
Pre-Irradiation
IRHMS57064, JANSR2N7470T1
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T.
IAS
0.01
+
-
VDD A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
2000
1600
1200
ID
TOP
20A
28.5A
BOTTOM 45A
800
400
0
25 50 75 100 125
Starting T J , Junction Temperature (°C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7

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IRHMS57064

RADIATION HARDENED POWER MOSFET

International Rectifier
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