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부품번호 | JANSR2N7478T1 기능 |
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기능 | RADIATION HARDENED POWER MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 8 페이지수
PD-96961B
IRHMS57Z60
RADIATION HARDENED
JANSR2N7478T1
POWER MOSFET
30V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/697
Product Summary
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57Z60 100K Rads (Si) 0.0055Ω 45A* JANSR2N7478T1
IRHMS53Z60 300K Rads (Si) 0.0055Ω 45A* JANSF2N7478T1
IRHMS54Z60 500K Rads (Si) 0.0055Ω 45A* JANSG2N7478T1
IRHMS58Z60 1000K Rads (Si) 0.0055Ω 45A* JANSH2N7478T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 3B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
45*
45*
180
208
1.67
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
1250
45
20.8
1.08
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
°C
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/04/15
IRHMS57Z60, JANSR2N7478T1
Pre-Irradiation
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
1 4.0V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
1000
100
10
4.0V
VGS
TOP
15V
12V
10V
8.0V
6.0V
5.0V
4.5V
BOTTOM 4.0V
1
0.1
60µs PULSE WIDTH
Tj = 150°C
1 10
VDS , Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
100 TJ = 150°C
10
TJ = 25°C
VDS
60µs
= 15V
PU1L5SE
WIDTH
1
4 4.5 5 5.5 6
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
2.0
ID = 45A
1.5
1.0
0.5
VGS = 12V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
4페이지 Pre-Irradiation
IRHMS57Z60, JANSR2N7478T1
15V
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T.
IAS
0.01Ω
+
-
VDD A
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
4000
3200
ID
TOP
20.1A
28.5A
BOTTOM 45A
2400
1600
800
0
25 50 75 100 125 150
Starting TJ , - Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
12 V
QGS
VG
QG
QGD
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
7페이지 | |||
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부품번호 | 상세설명 및 기능 | 제조사 |
JANSR2N7478T1 | RADIATION HARDENED POWER MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |