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PDF MTB09N06I3 Data sheet ( Hoja de datos )
| Número de pieza | MTB09N06I3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB09N06I3 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C912I3
Issued Date : 2015.05.30
Revised Date : 2015.06.01
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB09N06I3
BVDSS
ID@VGS=10V, TC=25°C
60V
50A
RDS(ON)@VGS=10V, ID=20A 7.6 mΩ(typ)
RDS(ON)@VGS=4.5V, ID=20A 9.3 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
MTB09N06I3
Outline
TO-251
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB09N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA: 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB09N06I3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C912I3
Issued Date : 2015.05.30
Revised Date : 2015.06.01
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
1.2
Ciss
1
C oss 0.8
ID=1mA
100
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.6
ID=250μ A
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=5V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
Maximum Safe Operating Area
1000
RDSON
Limited
100
10
100μ s
1ms
10ms
100ms
1s
1 TC=25°C, Tj=175°C
VGS=10V, Rθ JC=2°C/W
Single Pulse
DC
0.1
0.1 1 10 100
VDS, Drain-Source Voltage(V)
1000
8
6
4
VDS=30V
2 ID=20A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
80
70 Silicon limit
60
50
40
Package limit
30
20
10 VGS=10V, RθJC=2°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB09N06I3
CYStek Product Specification
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MTB09N06I3.PDF ] | |
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