DataSheet.es    


PDF MTB5D0P03FP Data sheet ( Hoja de datos )

Número de pieza MTB5D0P03FP
Descripción P-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech Electronics 
Logotipo CYStech Electronics Logotipo



Hay una vista previa y un enlace de descarga de MTB5D0P03FP (archivo pdf) en la parte inferior de esta página.


Total 8 Páginas

No Preview Available ! MTB5D0P03FP Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03FP
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 1/8
Features
Single Drive Requirement
Low On-resistance
Fast switching Characteristic
Pb-free lead plating package
BVDSS
ID @ VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-56A
4.2mΩ(typ)
4.8mΩ(typ)
Symbol
MTB5D0P03FP
Outline
TO-220FP
GGate
DDrain
SSource
GDS
Ordering Information
Device
Package
MTB5D0P03FP-0-UB-S
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB5D0P03FP
CYStek Product Specification

1 page




MTB5D0P03FP pdf
CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss 1.2
1
C oss
0.8
ID=-1mA
Crss 0.6
ID=-250μA
100
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=-5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
-ID, Drain Current(A)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=-5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
-ID, Drain Current(A)
100
8
6
4
2 VDS=-24V
ID=-25A
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Maximum Drain Current vs CaseTemperature
90
80 Silicon Limit
70
60
50
40
Limited by package
30
20
10
0
25
VGS=-10V, RθJC=2°C/W
50 75 100 125
TC, Case Temperature(°C)
150
175
MTB5D0P03FP
CYStek Product Specification

5 Page










PáginasTotal 8 Páginas
PDF Descargar[ Datasheet MTB5D0P03FP.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
MTB5D0P03FPP-Channel Enhancement Mode Power MOSFETCYStech Electronics
CYStech Electronics

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar