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Número de pieza | MTB5D0P03FP | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | CYStech Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB5D0P03FP (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTB5D0P03FP
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 1/8
Features
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating package
BVDSS
ID @ VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-25A
RDS(ON)@VGS=-4.5V, ID=-10A
-30V
-56A
4.2mΩ(typ)
4.8mΩ(typ)
Symbol
MTB5D0P03FP
Outline
TO-220FP
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
Package
MTB5D0P03FP-0-UB-S
TO-220FP
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB5D0P03FP
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C965FP
Issued Date : 2015.07.20
Revised Date : 2015.07.21
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss 1.2
1
C oss
0.8
ID=-1mA
Crss 0.6
ID=-250μA
100
0.1
1 10
-VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
10
1
VDS=-5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
-ID, Drain Current(A)
100
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=-5V
0.1 Pulsed
Ta=25°C
0.01
0.001
0.01 0.1
1
10
-ID, Drain Current(A)
100
8
6
4
2 VDS=-24V
ID=-25A
0
0 20 40 60 80 100 120 140
Qg, Total Gate Charge(nC)
Maximum Drain Current vs CaseTemperature
90
80 Silicon Limit
70
60
50
40
Limited by package
30
20
10
0
25
VGS=-10V, RθJC=2°C/W
50 75 100 125
TC, Case Temperature(°C)
150
175
MTB5D0P03FP
CYStek Product Specification
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MTB5D0P03FP.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB5D0P03FP | P-Channel Enhancement Mode Power MOSFET | CYStech Electronics |
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