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PDF MMFT2N02EL Data sheet ( Hoja de datos )
| Número de pieza | MMFT2N02EL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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MMFT2N02EL
Preferred Device
Power MOSFET
2 Amps, 20 Volts
N−Channel SOT−223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This device is also designed with
a low threshold voltage so it is fully enhanced with 5 Volts. This new
energy efficient device also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, dc−dc converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement to Interface Power Loads to Logic Level
ICs, VGS(th) = 2 Volts Max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
VDS
20
Gate−to−Source Voltage − Continuous
VGS ± 15
Drain Current − Continuous
Drain Current − Pulsed
ID 1.6
IDM 6.4
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
(Note 1.)
0.8
6.4
Unit
Vdc
Adc
Watts
mW/°C
Operating and Storage Temperature
Range
TJ, Tstg
−65 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 10 V, VGS = 5 V, Peak
IL= 2 A, L = 0.2 mH, RG = 25 Ω)
THERMAL CHARACTERISTICS
EAS
66 mJ
Thermal Resistance −
Junction−to−Ambient (surface mounted)
RθJA
156 °C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
260 °C
TL
10 Sec
1. Power rating when mounted on FR−4 glass epoxy printed circuit board using
recommended footprint.
http://onsemi.com
2 AMPERES
20 VOLTS
RDS(on) = 150 mW
N−Channel
D
G
S
MARKING
DIAGRAM
12
3
4 TO−261AA
CASE 318E
STYLE 3
2N02L
LWW
L = Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT2N02ELT1 SOT−223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
1
Publication Order Number:
MMFT2N02EL/D
1 page  
MMFT2N02EL
15 V
VGS
0
90%
IS
10%
IFM dlS/dt
trr
ton IRM
tfrr
VDS(pk)
VR
0.25 IRM
VDS Vf VdsL
MAX. CSOA
STRESS AREA
Figure 9. Commutating Waveforms
10
9
8
7 dIS/dt ≤ 400 A/μs
6
5
4
3
2
1
0
02
4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 10. Commutating Safe Operating Area (CSOA)
RGS
DUT
−
VR
+
VGS
IFM
+
20 V
−
IS
VDS
Li
VR = 80% OF RATED VDSS
VdsL = Vf + Li ⋅ dlS/dt
Figure 11. Commutating Safe Operating Area
Test Circuit
BVDSS
VDS
t RG
L
IL
VDD
Figure 12. Unclamped Inductive Switching
Test Circuit
IL(t)
VDD
tP t, (TIME)
Figure 13. Unclamped Inductive Switching
Waveforms
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet MMFT2N02EL.PDF ] | |
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