|
|
PDF MTW32N20E Data sheet ( Hoja de datos )
| Número de pieza | MTW32N20E | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MTW32N20E (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
MTW32N20E
Power MOSFET
32 Amps, 200 Volts
N−Channel TO−247
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Isolated Mounting Hole
• This is a Pb−Free Device*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage − Continuous
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
ID
ID
IDM
PD
200 Vdc
200 Vdc
± 20 Vdc
32 Adc
19
128 Apk
180 W
1.44 W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vpk,
IL = 32 Apk, L = 1.58 mH, RG = 25 W )
EAS
810 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
RRqqJJCA
0.7 °C/W
40
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 8
1
http://onsemi.com
32 AMPERES, 200 VOLTS
RDS(on) = 75 mW
N−Channel
D
G
S
MARKING DIAGRAM
AND PIN ASSIGNMENT
4 Drain
1
MTW32N20E
AYWWG
TO−247
CASE 340L
STYLE 1
1
Gate
3
Source
2
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MTW32N20EG
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MTW32N20E/D
1 page  
MTW32N20E
20
16
VDS
TJ = 25°C
ID = 32 A
VDS = 160 V
200
180
160
140
12
QT
120
100
8
Q1
Q2
80
VGS 60
4 40
20
0 Q3
0
0 10 20 30 40 50 60 70 80 90 100
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
TJ = 25°C
ID = 32 A
200 VDD = 100 V
100 VGS = 10 V
20
10
td(off)
tr
tf
td(on)
2
1
12
10 20
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
30 TJ = 25°C
VGS = 0 V
20
10
0
0 0.2 0.4 0.6 0.8
1
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MTW32N20E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MTW32N20E | TMOS POWER FET |  Motorola Semiconductors |
| MTW32N20E | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |