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Número de pieza MVB50P03HDLT4G
Descripción P-Channel Power MOSFET
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MTB50P03HDL,
MVB50P03HDLT4G
P-Channel Power MOSFET
50 A, 30 V, Logic Level D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MW)
GateSource Voltage
Continuous
NonRepetitive (tp 10 ms)
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 ms)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C, when
mounted with min. recommended pad size
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
30 Vdc
30 Vdc
±15 Vdc
± 20 Vpk
50 Adc
31
150 Apk
125 W
1.0 W/°C
2.5 W
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc, Peak
IL = 50 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient, when mounted with
the minimum recommended pad size
TJ, Tstg
EAS
RRRqqqJJJCAA
55 to 150
1250
1.0
62.5
50
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
50 AMPERES
30 VOLTS
RDS(on) = 25 mW
PChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M TB
50P03HG
AYWW
1
Gate
2
Drain
3
Source
MTB50P03H = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
January, 2014 Rev. 7
1
Publication Order Number:
MTB50P03HDL/D

1 page




MVB50P03HDLT4G pdf
MTB50P03HDL, MVB50P03HDLT4G
6
5
Q1
4
QT
Q2
30
VGS 25
20
3 15
2
ID = 50 A
TJ = 25°C
10
15
Q3 VDS
00
0 10 20 30 40 50 60 70 80
QT, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
1000 VDD = 30 V
VGS = 10 V
ID = 50 A
TJ = 25°C
100
tr
tf
td(off)
td(on)
101 10
RG, GATE RESISTANCE (Ohms)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 12. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
50
VGS = 0 V
TJ = 25°C
40
30
20
10
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
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