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Número de pieza | 1SS385F | |
Descripción | DIODE (HIGH SPEED SWITCHING) | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS385F (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS385F
High Speed Switching
1SS385F
Unit in mm
Low forward voltage: VF = 0.23V (typ.) @IF = 5mA
Ultra-small package
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
15
10
200 (*)
100 (*)
1 (*)
100
125
−55∼125
−40∼100
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Unit
V
V
mA
mA
A
mW
°C
°C
°C JEDEC
EIAJ
TOSHIBA
―
―
―
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 0, f = 1MHz
Min. Typ. Max. Unit
― 0.18 ―
V
― 0.23 0.30 V
― 0.35 0.50 V
― ― 20 µA
― 20 40 pF
Equivalent Circuit (Top View)
Marking
961001EAA2
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-09-14 1/2
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 1SS385F.PDF ] |
Número de pieza | Descripción | Fabricantes |
1SS385 | Silicon epitaxial planar type diode | Toshiba Semiconductor |
1SS385F | DIODE (HIGH SPEED SWITCHING) | Toshiba Semiconductor |
1SS385FV | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba |
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