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부품번호 | 1SS392 기능 |
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기능 | Silicon Epitaxial Schottky Barrier Type Diode | ||
제조업체 | Toshiba Semiconductor | ||
로고 | |||
전체 3 페이지수
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS392
High Speed Switching Application
1SS392
Unit: mm
z Low forward voltage
z Low reverse current
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC-59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P
100 *
1*
150 *
mA
A
mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
JEDEC
TO-236MOD
Operating temperature range
Topr
−40 to 100
°C
JEITA
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-3G1F
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
― ― 5 μA
― 18 25 pF
Start of commercial production
1994-12
1 2014-03-01
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구 성 | 총 3 페이지수 | ||
다운로드 | [ 1SS392.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
1SS390 | Band switching diode | ROHM Semiconductor |
1SS391 | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |