|
|
PDF 1SS395 Data sheet ( Hoja de datos )
| Número de pieza | 1SS395 | |
| Descripción | Silicon Epitaxial Schottky Barrier Type Diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 1SS395 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS395
High Speed Switching Application
1SS395
Unit: mm
z Small package
z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
15 V
Reverse voltage
VR 10 V
Maximum (peak) forward current
IFM 200 mA
Average forward current
Surge current (10ms)
Power dissipation
IO
IFSM
P
100 mA
1A
100 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-70
TOSHIBA
1-2P1D
Weight: 0.006g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Unit rating. Total rating = unit rating × 0.7
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 5mA
― IF = 100mA
― VR = 10V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 0.30 V
― 0.35 0.50
― ― 20 μA
― 20 40 pF
Marking
Start of commercial production
1996-04
1 2014-03-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS395.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 1SS390 | Band switching diode |  ROHM Semiconductor |
| 1SS391 | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
| 1SS392 | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
| 1SS393 | Silicon Epitaxial Schottky Barrier Type Diode | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |