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부품번호 | PMPB29XNE 기능 |
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기능 | single N-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PMPB29XNE
30 V, single N-channel Trench MOSFET
26 November 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
• 1 kV ESD protection
• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
• Exposed drain pad for excellent thermal conduction
• Tin-plated, 100% solderable side pads for optical solder inspection
3. Applications
• Charging switch for portable devices
• DC-to-DC converters
• Power management in battery-driven portables
• Hard disk and computing power management
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 5 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-12 -
12 V
[1] - - 5 A
- 28 33 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMPB29XNE
30 V, single N-channel Trench MOSFET
102
ID
(A)
10
1
10-1
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
017aaa907
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-2
10-2
IDM = single pulse
10-1
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
in free air; t ≤ 5 s
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1] -
235 270 K/W
[2] -
67 74 K/W
[2] -
33 36 K/W
- 5 10 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMPB29XNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 15
4페이지 NXP Semiconductors
PMPB29XNE
30 V, single N-channel Trench MOSFET
12 4.5 2.5
ID 1.6
(A)
8
017aaa908
1.5
1.4
1.3
10-2
ID
(A)
10-3
10-4
017aaa909
min typ max
4 1.2
10-5
0
01
Tj = 25 °C
VGS = 1.1 V
234
VDS (V)
10-6
0.0
0.4
Tj = 25 °C; VDS = 5 V
0.8 1.2
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Subthreshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
100
RDSon
(mΩ)
80
017aaa910
1.3 V
1.4 V
1.5 V
1.6 V
100
RDSon
(mΩ)
80
017aaa911
60
40
2.5 V
20
1.7 V
1.8 V
VGS = 4.5 V
60
40
20
Tj = 150 °C
Tj = 25 °C
0
04
Tj = 25 °C
8 12
ID (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
012345
VGS (V)
ID = 5 A
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMPB29XNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 15
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |