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PDF PMV130ENEA Data sheet ( Hoja de datos )
| Número de pieza | PMV130ENEA | |
| Descripción | N-channel Trench MOSFET | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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PMV130ENEA
40 V, N-channel Trench MOSFET
12 June 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
• 1 kV ESD protected
• AEC-Q101 qualified
3. Applications
• Relay driver
• High-speed line driver
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 1.5 A; Tj = 25 °C
Min Typ Max Unit
- - 40 V
-20 -
20 V
[1] - - 2.1 A
- 95 120 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
PMV130ENEA
40 V, N-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
- 20 25 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-011955
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.50
0.25
0.75
0.33
0.20
0.10 0.05
0.02
0.01
0
1
10-3
10-2
FR4 PCB, standard footprint
10-1
1
10 102 103
tP (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-011956
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.20 0.10
0.05
10
0 0.01 0.02
0.25
1
10-3
10-2
10-1
FR4 PCB, mounting pad for drain 6 cm2
1
10 102 103
tP (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV130ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 16
5 Page 
NXP Semiconductors
12. Package outline
Plastic surface-mounted package; 3 leads
PMV130ENEA
40 V, N-channel Trench MOSFET
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
PMV130ENEA
All information provided in this document is subject to legal disclaimers.
Product data sheet
12 June 2014
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PMV130ENEA.PDF ] | |
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