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부품번호 | PMV30UN2 기능 |
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기능 | N-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
PMV30UN2
20 V, N-channel Trench MOSFET
24 April 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Trench MOSFET technology
• Low threshold voltage
• Very fast switching
• Enhanced power dissipation capability of 1000 mW
3. Applications
• LED driver
• Power management
• Low-side load switch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 5.4 A
- 24 32 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
120
Pder
(%)
80
017aaa123
PMV30UN2
20 V, N-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1.
MOSFET transistor: Normalized total
power dissipation as a function of junction
temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2.
MOSFET transistor: Normalized continuous
drain current as a function of junction
temperature
102
ID
(A)
10
Limit RDSon = VDS/ID
1
DC; Tamb = 25 °C; drain mounting pad 6 cm2
10-1
DC; Tsp = 25 °C
aaa-012418
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
tp = 100 ms
10-2
10-1
IDM = single pulse
1
10 102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
PMV30UN2
Product data sheet
Conditions
in free air
t≤5s
[1]
[2]
[2]
All information provided in this document is subject to legal disclaimers.
24 April 2014
Min Typ Max Unit
- 217 255 K/W
- 105 124 K/W
- 73 86 K/W
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 15
4페이지 NXP Semiconductors
PMV30UN2
20 V, N-channel Trench MOSFET
18
ID
(A)
12
4.5 V
2.0 V
2.5 V
aaa-012419
1.8 V
10-3
ID
(A)
10-4
aaa-012420
min typ max
1.5 V
6 10-5
VGS = 1.2 V
0
01234
VDS (V)
Tj = 25 °C
10-6
0
0.5
Tj = 25 °C; VDS = 5 V
1 1.5
VGS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
0.20
RDSon
(Ω)
0.15
1.2 V
1.5 V
aaa-012421
1.8 V
2.0 V
0.3
RDSon
(Ω)
0.2
aaa-012422
0.10
0.05
3.0 V
0.1
Tj = 150 °C
0
06
Tj = 25 °C
VGS = 4.5 V
12 18
ID (A)
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
0
01
ID = 4.2 A
Tj = 25 °C
2345
VGS (V)
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMV30UN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 15
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |