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부품번호 | PMV65XPEA 기능 |
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기능 | P-channel Trench MOSFET | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 16 페이지수
PMV65XPEA
20 V, P-channel Trench MOSFET
27 November 2014
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
• Trench MOSFET technology
• Very fast switching
• Enhanced power dissipation capability: Ptot = 890 mW
• ElectroStatic Discharge (ESD) protection 2 kV HBM
• AEC-Q101 qualified
3. Applications
• Relay driver
• High speed line driver
• High-side loadswitch
• Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C
- - -20 V
VGS gate-source voltage
-12 -
12 V
ID
drain current
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.3 A
Static characteristics
RDSon
drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
resistance
- 67 78 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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NXP Semiconductors
120
Pder
(%)
80
017aaa123
PMV65XPEA
20 V, P-channel Trench MOSFET
120
Ider
(%)
80
017aaa124
40 40
0
- 75
- 25
25
75 125 175
Tj (°C)
Fig. 1. Normalized total power dissipation as a
function of junction temperature
0
- 75 - 25
25
75 125 175
Tj (°C)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
-102
ID
(A)
-10
Limit RDSon = VDS/ID
aaa-012866
tp = 10 µs
tp = 100 µs
-1
-10-1
DC; Tsp = 25 °C
DC; Tamb = 25 °C;
drain mounting pad 6 cm2
tp = 1 ms
tp = 10 ms
tp = 100 ms
-10-2
-10-1
IDM = single pulse
-1
-10 -102
VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
PMV65XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
4 / 16
4페이지 NXP Semiconductors
PMV65XPEA
20 V, P-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = -250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = -250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS drain leakage current VDS = -20 V; VGS = 0 V; Tj = 25 °C
IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.8 A; Tj = 150 °C
VGS = -2.5 V; ID = -2.2 A; Tj = 25 °C
gfs forward
VDS = -10 V; ID = -2 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = -10 V; ID = -2.8 A; VGS = -4.5 V;
Tj = 25 °C
QGD gate-drain charge
Ciss
input capacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = -10 V; ID = -2.8 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage IS = -0.85 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-20 - - V
-0.75 -1
-1.25 V
- - -1 µA
- - 10 µA
- - -10 µA
- - 2 µA
- - -2 µA
- 67 78 mΩ
- 98 114 mΩ
- 99 125 mΩ
- 7.4 - S
- 11.6 - Ω
- 5 9 nC
- 1.1 - nC
- 1.1 - nC
- 618 - pF
- 80 - pF
- 58 - pF
- 7 - ns
- 19 - ns
- 36 - ns
- 17 - ns
- -0.75 -1.2 V
PMV65XPEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 November 2014
© NXP Semiconductors N.V. 2014. All rights reserved
7 / 16
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PMV65XPEA | P-channel Trench MOSFET | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |