PSMN075-100MSE Datasheet PDF - NXP Semiconductors
| Part Number | PSMN075-100MSE | |
| Description | N-channel MOSFET | |
| Manufacturers | NXP Semiconductors | |
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PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33
designed specifically for PoE applications
26 March 2013
Product data sheet
1. General description
New standards and proprietary approaches are enabling the next generation of Power-
over-Ethernet (PoE) systems capable of delivering up to 100W to each powered
device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom
CCTV cameras, for example, are placing increased demands on the power sourcing
equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal
management and power density. Part of NXP’s “NextPower Live” MOSFET portfolio,
the PSMN075-100MSE has been designed specifically to compliment the latest PoE
controllers, offering both superior linear mode operation and very low RDS(on) in a cost-
effective, industry compatible, LFPAK33 package.
2. Features and benefits
• Enhanced forward biased safe operating area for superior linear mode operation
• Low Rdson for low conduction losses
• Ultra reliable LFPAK33 package – no glue, no wires, 175°C
• Very low IDSS
3. Applications
• IEEE802.3at and proprietary solutions - (type 2)
• Suitable for PoE applications upto 30W
• Use PSMN040-100MSE for higher power requirements
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tj = 25 °C; VGS = 10 V; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 5 A; VDS = 50 V;
Tj 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 18 A
- - 65 W
- 57 71 mΩ
- 5.3 - nC
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NXP Semiconductors
10
Zth(j-mb)
(K/W)
PSMN075-100MSE
N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed
specifically for PoE applications
003aak717
1 δ = 0.5
0.2
0.1
0.05
10-1
0.02
single shot
P
tp
δ= T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
tp (s)
t
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 100 °C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 175 °C;
Fig. 13; Fig. 12
RG
gate resistance
f = 10 MHz
Min Typ Max Unit
100 -
90 -
2.3 3.3
-
-
4
V
V
V
1- - V
- - 4.6 V
-
0.01 1
µA
- - 500 µA
- 10 100 nA
- 10 100 nA
- 57 71 mΩ
- - 128 mΩ
- - 192 mΩ
- 1.55 - Ω
PSMN075-100MSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 March 2013
© NXP B.V. 2013. All rights reserved
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