PSMN7R8-100PSE Datasheet PDF - NXP Semiconductors
| Part Number | PSMN7R8-100PSE | |
| Description | N-channel MOSFET | |
| Manufacturers | NXP Semiconductors | |
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PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with
improved SOA in TO220 package
11 August 2014
Product data sheet
1. General description
Standard level N-channel MOSFET with improved SOA in a TO220 package. Part of
NXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstand
substantial in-rush and fault condition currents during turn on/off, whilst offering a low
RDS(on) characteristic to keep temperatures down and efficiency up in continued use.
Ideal for telecommunication systems based on 48 V backplanes / supply rails.
2. Features and benefits
• Enhanced safe operating area (SOA) for superior protection during linear mode
operation
• Low RDS(on) for low conduction losses
3. Applications
• Electronic fuse
• Hot-swap / Soft-start
• Uninterruptible power supplies
• Motor control
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 100 °C; VGS = 10 V; Fig. 2
Ptot total power dissipation Tmb = 25 °C; Fig. 1
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 83 A
- - 294 W
- 6.7 7.8 mΩ
- 41 - nC
- 128 - nC
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NXP Semiconductors
PSMN7R8-100PSE
N-channel 100 V 7.8 mΩ standard level MOSFET with improved SOA in
TO220 package
1
Zth(j-mb)
(K/W)
δ = 0.5
10-1 0.2
0.1
0.05
10-2 0.02
single shot
003aak747
P
tp
δ= T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp
T
tp (s)
t
1
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 250 µA; VGS = 0 V; Tj = -55 °C
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
Fig. 10; Fig. 11
VGSth
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 175 °C;
voltage
Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11
IDSS drain leakage current VDS = 100 V; VGS = 0 V; Tj = 25 °C
VDS = 100 V; VGS = 0 V; Tj = 175 °C
IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 12; Fig. 13
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 12; Fig. 13
RG
gate resistance
f = 1 MHz
Min Typ Max Unit
100 - - V
90 - - V
234V
1- - V
- - 4.6 V
-
0.1 2
µA
- - 500 µA
- 10 100 nA
- 10 100 nA
- 6.7 7.8 mΩ
- - 14 mΩ
- - 21 mΩ
0.42 0.83 1.66 Ω
PSMN7R8-100PSE
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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