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PDF 1SS402 Data sheet ( Hoja de datos )

Número de pieza 1SS402
Descripción DIODE (HIGH SPEED SWITCHING APPLICATIONS)
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 1SS402 Hoja de datos, Descripción, Manual

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS402
High Speed Switching Applications
1SS402
Unit in mm
z Two independent diodes are mounted on four-pin ultra-small packages that
are suitable for higher mounting densities.
z Low forward voltage
: VF (3) = 0.50V (typ.)
z Low reverse current
: IR= 0.5μA (max)
z Small total capacitance : CT = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge Current (10ms)
Power dissipation
Junction temperature
Storage temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
25 V
20 V
100 *
mA
50 * mA
1 * A JEDEC
100 *
mW JEITA
125 °C TOSHIBA
1-2U1A
55~125 °C Weight: 0.006 g(typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = Unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
CT
Test
Circuit
Test Condition
IF = 1mA
IF = 5mA
IF = 50mA
VR = 20V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.33
0.38
V
0.50 0.55
― ― 0.5 μA
3.9 5.0 pF
Pin Assignment (Top View)
Marking
A7
1 2007-11-01

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