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PDF 1SS403 Data sheet ( Hoja de datos )
| Número de pieza | 1SS403 | |
| Descripción | Silicon epitaxial planar type diode | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1SS403 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS403
High Voltage Switching Applications
AEC-Q101 Qualified (Note1)
Two-pin small packages are suitable for higher mounting densities.
Excellent in forward current and forward voltage
characteristics
: VF (2) = 0.90V (typ.)
Fast reverse recovery time : trr = 60ns (max)
Small total capacitance
: CT = 1.5pF (typ.)
Note1: For detail information, please contact to our sales.
1SS403
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
250
200
300
100
2
200 *
125
−55 to 125
V
V
mA
mA
A
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.0045g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: When mounted on a glass epoxy board PCB: 20 mm × 20 mm,
with copper pad 4 mm × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― VR = 50V
― VR = 200V
― VR = 0, f = 1MHz
― IF = 10mA (Fig. 1)
Min Typ. Max Unit
― 0.72 1.0
― 0.90 1.2
― ― 0.1
― ― 1.0
― 1.5 3.0
― 10 60
V
μA
pF
ns
Start of commercial production
1998-10
1 2015-01-09
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1SS403.PDF ] | |
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