(PDF) 4N65-Q Datasheet - N-CHANNEL POWER MOSFET

Número de pieza	4N65-Q
Descripción	N-CHANNEL POWER MOSFET
Fabricantes	Unisonic Technologies
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No Preview Available ! UNISONIC TECHNOLOGIES CO., LTD 4N65-Q 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.1Ω @ VGS = 10 V, ID = 2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-963.E 1 page 4N65-Q  TEST CIRCUITS AND WAVEFORMS Power MOSFET VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-963.E 5 Page

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PDF 4N65-Q Data sheet ( Hoja de datos )