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부품번호 | 6N60-C 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
전체 7 페이지수
UNISONIC TECHNOLOGIES CO., LTD
6N60-C
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N60-C is a high voltage power MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and
have a high rugged avalanche characteristics. This power
MOSFET is usually used at high speed switching
applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.5Ω @ VGS=10V, ID=3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N60L-TF3-T
6N60G-TF3-T
TO-220F
6N60L-TF1-T
6N60G-TF1-T
TO-220F1
6N60L-TMS-T
6N60G-TMS-T
TO-251S
6N60L-TMS2-T
6N60G-TMS2-T
TO-251S2
6N60L-TMS4-T
6N60G-TMS4-T
TO-251S4
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tube
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www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
UNI
T
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
600
V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
VDS=480V, VGS=0V, TJ =125°C
10 μA
100 μA
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
100 nA
-100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250μA
VGS=10V, ID=3.1A
2.0 4.0 V
1.1 1.5 Ω
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
650 pF
COSS
VDS=25V, VGS=0V, f =1.0 MHz
95
pF
CRSS
8 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD=30V, ID=1.0A, RG=25Ω
(Note 1, 2)
VDS=50V, ID=1.3A, VGS=10 V
(Note 1, 2)
54 ns
46 ns
180 ns
56 ns
25 nC
6.6 nC
4.9 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0 V, IS=6.2 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
1.4 V
6.2 A
24.8 A
Reverse Recovery Time
trr VGS=0 V, IS=6.2 A,
Reverse Recovery Charge
QRR dIF/dt=100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
290 ns
2.35 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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4페이지 6N60-C
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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다운로드 | [ 6N60-C.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
6N60-C | N-CHANNEL POWER MOSFET | Unisonic Technologies |
6N60-P | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |