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부품번호 | 7N65-R 기능 |
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기능 | N-CHANNEL POWER MOSFET | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
7N65-R
7.4A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 7N65-R is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* RDS(ON) = 1.2Ω @ VGS = 10V, ID = 3.7A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N65L-TA3-T
7N65G-TA3-T
7N65L-TF1-T
7N65G-TF1-T
7N65L-TF2-T
7N65G-TF2-T
7N65L-TF3-T
7N65G-TF3-T
7N65L-T2Q-T
7N65G-T2Q-T
7N65L-TQ2-R
7N65G-TQ2-R
7N65L-TQ2-T
7N65G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
7N65L-TA3-T
(1) Packing Type
(2) Package Type
(3) Lead Free
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-262
TO-263
TO-263
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tube
(1) R: Tape Reel, T: Tube
(2) TA3: TO-220, TF1: TO220-F1, TF3: TO-220F
(2) T2Q: TO-262, TQ2: TO-263, TF2: TO220-F2
(3) G: Halogen Free, L: Lead Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-A11. A
7N65-R
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-A11. A
4페이지 7N65-R
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Transient Thermal Response Curve
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
1. θJC (t) = 1.18°C/W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
10-5 10-4 10-3
10-2 10-1 100 101
Square Wave Pulse Duration, t1 (sec)
Safe Operating Area – 650V
Operation in This Area is Limited by RDS(on)
101
100
10-1
Notes:
1. TJ=25°C
2. TJ=150°C
3. Single Pulse
100µs
1ms
10ms
DC
10-2
100
101 102 650103
Drain-Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Maximum Drain Current vs. Case
Temperature
7.5
6.25
5.0
3.75
2.5
1.25
0
25
50 75 100 125
Case Temperature, TC (°C)
150
7 of 8
QW-R502-A11. A
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ 7N65-R.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
7N65-F | N-CHANNEL POWER MOSFET | Unisonic Technologies |
7N65-M | N-CHANNEL POWER MOSFET | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |