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부품번호 | IDP20C65D2 기능 |
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기능 | Diode ( Rectifier ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 10 페이지수
Diode
RapidSwitchingEmitterControlledDiode
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Maximum Ratings (electrical parameters per diode)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Repetitivepeakreversevoltage,Tvj≥25°C
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
PowerdissipationTC=25°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Symbol
VRRM
IF
IFpuls
IFSM
Ptot
Tvj
Tstg
Value
650
20.0
10.0
30.0
60.0
68.0
-40...+175
-55...+150
260
Unit
V
A
A
A
W
°C
°C
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
Thermal Resistances (per diode)
Parameter
Characteristic
Symbol Conditions
Diode thermal resistance,1)
junction - case
Thermal resistance
junction - ambient
Rth(j-c)
Rth(j-a)
Max. Value
Unit
2.20 K/W
62 K/W
Electrical Characteristics (per diode), at Tvj = 25°C, unless otherwise specified
Parameter
Static Characteristic
Symbol Conditions
Value
Unit
min. typ. max.
Diode forward voltage
Reverse leakage current2)
IF=10.0A
VF Tvj=25°C
Tvj=175°C
VR=650V
IR Tvj=25°C
Tvj=175°C
- 1.60 2.20 V
- 1.65 -
- 4.0 40.0 µA
- 250.0 -
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
LE
Value
Unit
min. typ. max.
- 7.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
2) Reverse leakage current per diode specified for operating conditions with zero voltage applied to the other diode.
4
Rev.2.1,2014-09-18
4페이지 IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
25
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
20
15
10
5
0
-250
-500
-750
-1000
-1250
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
0 -1500
0 500 1000 1500 2000 2500 3000
0 500 1000 1500 2000 2500 3000
diF/dt,DIODECURRENTSLOPE[A/µs]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical reverse recovery current per diode as Figure 6. Typical diode peak rate of fall of rev. rec.
a function of diode current slope
current per diode as a function of diode
(VR=400V)
current slope
(VR=400V)
30
Tj=25°C
Tj=175°C
25
20
2.50
2.25
2.00
1.75
IF=5A
IF=10A
IF=20A
15 1.50
1.25
10
1.00
5
0.75
0
0.0 0.5 1.0 1.5 2.0 2.5
VF,FORWARDVOLTAGE[V]
Figure 7. Typical diode forward current per diode as a
function of forward voltage
0.50
25
50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
175
Figure 8. Typical diode forward voltage as a function of
junction temperature
7 Rev.2.1,2014-09-18
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IDP20C65D2 | Diode ( Rectifier ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |