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Número de pieza | IGZ50N65H5 | |
Descripción | IGBT | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGZ50N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
1 page IGZ50N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=520V,IC=50.0A,
VGE=15V
LE
min.
Value
typ.
max. Unit
- 3100 -
- 53 - pF
- 11 -
- 109.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tvj=25°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=20.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ50N65EH5.
min.
Value
typ.
max. Unit
- 20 - ns
- 7 - ns
- 250 - ns
- 21 - ns
- 0.41 - mJ
- 0.19 - mJ
- 0.60 - mJ
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=150°C,
VCC=400V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=12.0Ω,RG(off)=20.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ50N65EH5.
Value
Unit
min. typ. max.
- 19 - ns
- 8 - ns
- 292 - ns
- 19 - ns
- 0.67 - mJ
- 0.27 - mJ
- 0.94 - mJ
1) The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
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11 Rev.2.1,2014-10-31
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet IGZ50N65H5.PDF ] |
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