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부품번호 | IKW20N60TA 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 13 페이지수
IKW20N60TA
TrenchStop® Series
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5s
TrenchStop® and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Type
IKW20N60TA
VCE
600V
IC VCE(sat),Tj=25°C
20A 1.5V
Tj,max
175C
Marking
K20T60A
G
E
PG-TO247-3
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE 600V, Tj 175C, tp 1µs
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time1)
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10s)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Tsold
Value
600
40
20
60
60
40
20
60
20
5
166
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 27.08.2013
IKW20N60TA
TrenchStop® Series
60A
50A
40A
30A
TC=80°C
TC=110°C
20A
Ic
10A
0A
10Hz
Ic
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, RG = 12)
tp=2µs
10µs
10A
50µs
1A
1ms
DC 10ms
0.1A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
160W
140W
120W
100W
80W
60W
40W
20W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
30A
25A
20A
15A
10A
5A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.2 27.08.2013
4페이지 IKW20N60TA
TrenchStop® Series
2.4mJ
*) Eon and Ets include losses
due to diode recovery
2.0mJ
Ets*
1.6mJ
1.2mJ
0.8mJ
Eoff
0.4mJ
0.0mJ
0A
Eon*
5A 10A 15A 20A 25A 30A 35A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 12Ω,
Dynamic test circuit in Figure E)
2.4m J
2.0m J
*) Eon and Ets include losses
due to diode recovery
E ts*
1.6m J
1.2m J
E off
0.8m J
0.4m J
E on*
0.0m J
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 20A,
Dynamic test circuit in Figure E)
1.0mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
0.8mJ
0.6mJ
Eoff
0.4mJ
Eon*
0.2mJ
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 20A, RG = 12Ω,
Dynamic test circuit in Figure E)
2.0m J
1.8m J
1.6m J
*) Eon and Ets include losses
due to diode recovery
1.4m J
1.2m J
1.0m J Ets*
0.8m J
0.6m J
E off
0.4m J
0.2m J
Eon*
0.0m J
300V 350V 400V 450V 500V 550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 20A, RG = 12Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.2 27.08.2013
7페이지 | |||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IKW20N60T | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon Technologies |
IKW20N60TA | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |