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부품번호 | IKW50N60TA 기능 |
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기능 | IGBT ( Insulated Gate Bipolar Transistor ) | ||
제조업체 | Infineon | ||
로고 | |||
전체 14 페이지수
IKW50N60TA
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5 µs
TRENCHSTOPTM and Fieldstop technology for 600 V
applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications:
Main inverter
Air – Con compressor
PTC heater
Motor drives
C
G
E
PG-TO247-3
Type
VCE
IKW50N60TA 600V
IC
50A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K50T60A
Package
PG-TO247-3
IFAG IPC TD VLS
1
Rev. 2.3 17.09.2014
IKW50N60TA
TRENCHSTOPTM Series
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7 , L=103nH
C=39pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=400V, IF=50A,
diF/dt=1280A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
26
29
299
29
1.2
1.4
2.6
143
1.8
27.7
-671
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7 , L=103nH
C=39pF
L, C from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=175C
VR=400V, IF=50A,
diF/dt=1280A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
27
33
341
55
1.8
1.85
3.65
205
4.3
40.7
-449
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
IFAG IPC TD VLS
4
Rev. 2.3 17.09.2014
4페이지 IKW50N60TA
TRENCHSTOPTM Series
q
t
d(off)
td(off)
100ns
td(on)
tf
tr
10ns
0A
20A
40A
60A
80A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 7Ω,
Dynamic test circuit in Figure E)
100ns
tf
tr
td(on)
10ns
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
t
d(off)
100ns
tf
tr
t
d(on)
10ns
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, RG=7Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.8mA)
IFAG IPC TD VLS
7
Rev. 2.3 17.09.2014
7페이지 | |||
구 성 | 총 14 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IKW50N60T | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon Technologies |
IKW50N60TA | IGBT ( Insulated Gate Bipolar Transistor ) | Infineon |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |