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IKW50N60TA 데이터시트 PDF




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부품번호 IKW50N60TA 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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IKW50N60TA 데이터시트, 핀배열, 회로
IKW50N60TA
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time 5 µs
TRENCHSTOPTM and Fieldstop technology for 600 V
applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications:
Main inverter
Air Con compressor
PTC heater
Motor drives
C
G
E
PG-TO247-3
Type
VCE
IKW50N60TA 600V
IC
50A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K50T60A
Package
PG-TO247-3
IFAG IPC TD VLS
1
Rev. 2.3 17.09.2014




IKW50N60TA pdf, 반도체, 판매, 대치품
IKW50N60TA
TRENCHSTOPTM Series
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7 , L=103nH
C=39pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=400V, IF=50A,
diF/dt=1280A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
26
29
299
29
1.2
1.4
2.6
143
1.8
27.7
-671
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=50A,
VGE=0/15V,
RG= 7 , L=103nH
C=39pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=175C
VR=400V, IF=50A,
diF/dt=1280A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
27
33
341
55
1.8
1.85
3.65
205
4.3
40.7
-449
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
IFAG IPC TD VLS
4
Rev. 2.3 17.09.2014

4페이지










IKW50N60TA 전자부품, 판매, 대치품
IKW50N60TA
TRENCHSTOPTM Series
q
t
d(off)
td(off)
100ns
td(on)
tf
tr
10ns
0A
20A
40A
60A
80A
Figure 9.
IC, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 7Ω,
Dynamic test circuit in Figure E)
100ns
tf
tr
td(on)
10ns

    
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E)
t
d(off)
100ns
tf
tr
t
d(on)
10ns
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 50A, RG=7Ω,
Dynamic test circuit in Figure E)
7V
6V
max.
typ.
5V
4V min.
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.8mA)
IFAG IPC TD VLS
7
Rev. 2.3 17.09.2014

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IKW50N60TA

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