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IKW75N60TA 데이터시트 PDF




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부품번호 IKW75N60TA 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
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IKW75N60TA 데이터시트, 핀배열, 회로
IKW75N60TA
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOPTM and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
G
E
PG-TO247-3
Type
IKW75N60TA
VCE
600V
IC
75A
VCE(sat),Tj=25°C
1.5V
Tj,max
175C
Marking
K75T60A
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj 25C
DC collector current, limited by Tjmax
Pulsed collector current, tp limited by Tjmax
TC = 25C
TC = 105C
Turn off safe operating area, VCE 600V, Tj 175C, tp 1µs
Diode forward current, limited by Tjmax
TC = 25C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
TC = 100C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature (wavesoldering only allowed at leads,
1.6mm (0.063 in.) from case for 10s)
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Tsold
Value
600
801)
75
225
225
801)
75
225
20
5
428
-40...+175
-55...+150
260
Unit
V
A
V
s
W
C
1) Value limited by bondwire
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.3 14.07.2014




IKW75N60TA pdf, 반도체, 판매, 대치품
IKW75N60TA
TRENCHSTOPTM Series
q
200A
150A
100A
TC=80°C
TC=110°C
50A
Ic
0A
10Hz
Ic
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, RG = 5)
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
400W
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 175C)
120A
90A
60A
30A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
DC Collector current as a function
of case temperature
(VGE 15V, Tj 175C)
Power Semiconductors
4
Rev. 2.3 14.07.2014

4페이지










IKW75N60TA 전자부품, 판매, 대치품
IKW75N60TA
TRENCHSTOPTM Series
q
*) Eon and Ets include losses
due to diode recovery
12.0mJ
8.0mJ
4.0mJ
Ets*
Eon*
Eoff
0.0mJ
0A 20A 40A 60A 80A 100A 120A 140A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, RG = 5Ω,
Dynamic test circuit in Figure E)
10 mJ
9 mJ
8 mJ
*) Eon and Ets include losses
due to diode recovery
Ets*
7 mJ
6 mJ
5 mJ
Eoff*
4 mJ
3 mJ
Eon*
2 mJ
1 mJ
0 mJ
0Ω
5 Ω 10 Ω 15 Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 75A,
Dynamic test circuit in Figure E)
5.0mJ
*) Eon and Ets include losses
due to diode recovery
4.0mJ
3.0mJ Eoff
2.0mJ
Eon*
1.0mJ
*) Eon and Ets include losses
Ets* due to diode recovery
8mJ
6mJ
Ets*
4mJ
2mJ
Eon*
E off
0.0mJ
25°C 50°C 75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 75A, RG = 5Ω,
Dynamic test circuit in Figure E)
0mJ
300V 350V 400V 450V 500V 550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 75A, RG = 5Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
7
Rev. 2.3 14.07.2014

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관련 데이터시트

부품번호상세설명 및 기능제조사
IKW75N60T

IGBT ( Insulated Gate Bipolar Transistor )

Infineon Technologies
Infineon Technologies
IKW75N60TA

IGBT ( Insulated Gate Bipolar Transistor )

Infineon
Infineon

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