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PDF SQM120N10-09 Data sheet ( Hoja de datos )
| Número de pieza | SQM120N10-09 | |
| Descripción | Automotive N-Channel MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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www.vishay.com
SQM120N10-09
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A)
Configuration
Package
TO-263
100
0.0095
120
Single
TO-263
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Top View
S
D
G
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
TC = 25 °C a
TC = 125 °C
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
100
± 20
120
73
120
480
73
266
375
125
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-1875-Rev. C, 10-Aug-15
1
Document Number: 71515
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
IDM Limited
Limited by
RDS(on)*
10
1
SQM120N10-09
Vishay Siliconix
100 µs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
0.1 TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
* VGS
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which RDS(on) is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S15-1875-Rev. C, 10-Aug-15
5
Document Number: 71515
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
0.420
(10.668)
AN826
Vishay Siliconix
Return to Index
0.135
(3.429)
0.200
(5.080)
0.145
(3.683)
0.050
(1.257)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Document Number: 73397
11-Apr-05
www.vishay.com
1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SQM120N10-09.PDF ] | |
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