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부품번호 SQM200N04-1m1L 기능
기능 Automotive N-Channel MOSFET
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SQM200N04-1m1L 데이터시트, 핀배열, 회로
www.vishay.com
SQM200N04-1m1L
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
TO-263-7L
40
0.0011
0.0013
200
Single
D
FEATURES
• TrenchFET® Power MOSFET
• Package with Low Thermal Resistance
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedd
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
G
Drain connected to Tab
GSS DS SS
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
TO-263-7L
SQM200N04-1m1L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
IS
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
40
± 20
200
200
200
600
100
500
375
125
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S12-2164-Rev. A, 24-Sep-12
1
Document Number: 62679
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQM200N04-1m1L pdf, 반도체, 판매, 대치품
www.vishay.com
SQM200N04-1m1L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
ID = 20 A
VDS = 20 V
8
6
4
2
2.4
ID = 30 A
2.1
1.8
1.5
1.2
0.9
VGS = 10 V
VGS = 4.5 V
0
0 60 120 180 240 300
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100 0.005
10
1 TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.001
0.0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
0.5
0.1
0.004
0.003
0.002
0.001
TJ = 150 °C
TJ = 25 °C
0.000
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
ID = 10 mA
48
- 0.3
- 0.7
ID = 5 mA
46
44
- 1.1
ID = 250 μA
- 1.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
42
40
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-2164-Rev. A, 24-Sep-12
4
Document Number: 62679
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQM200N04-1m1L 전자부품, 판매, 대치품
www.vishay.com
Ordering Information
Vishay Siliconix
D2PAK / TO-263 and TO-262
Ordering codes for the SQ rugged series power MOSFETs in the D2PAK / TO-263 and TO-262 packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQM100N04-2m7
SQM100N04-2M7-GE3
SQM100N10-10
SQM100N10-10-GE3
SQM110N05-06L
SQM110N05-06L-GE3
SQM110P06-8m9L
SQM110P06-8M9L-GE3
SQM120N02-1m3L
SQM120N02-1M3L-GE3
SQM120N03-1m5L
SQM120N03-1M5L-GE3
SQM120N04-1m7
SQM120N04-1M7-GE3
SQM120N04-1m7L
SQM120N04-1M7L-GE3
SQM120N04-1m9
SQM120N04-1M9-GE3
SQM120N06-06
SQM120N06-06-GE3
SQM120N06-3m5L
SQM120N06-3M5L-GE3
SQM120N10-09
SQM120N10-09-GE3
SQM120N10-3m8
SQM120N10-3M8-GE3
SQM120P04-04L
SQM120P04-04L-GE3
SQM120P06-07L
SQM120P06-07L-GE3
SQM200N04-1m1L
SQM200N04-1M1L-GE3
SQM200N04-1m7L
SQM200N04-1M7L-GE3
SQM200N04-1m8
SQM200N04-1M8-GE3
SQM25N15-52
SQM25N15-52-GE3
SQM35N30-97
SQM35N30-97-GE3
SQM40N10-30
SQM40N10-30-GE3
SQM40N15-38
SQM40N15-38-GE3
SQM40P10-40L
SQM40P10-40L-GE3
SQM47N10-24L
SQM47N10-24L-GE3
SQM50020EL
-
SQM50N04-4m0L
SQM50N04-4M0L-GE3
SQM50N04-4m1
SQM50N04-4M1-GE3
SQM50P03-07
SQM50P03-07-GE3
SQM50P04-09L
SQM50P04-09L-GE3
SQM50P06-15L
SQM50P06-15L-GE3
SQM50P08-25L
SQM50P08-25L-GE3
SQM60N06-15
SQM60N06-15-GE3
SQM60N20-35
SQM60N20-35-GE3
SQM85N15-19
SQM85N15-19-GE3
SQV120N10-3m8
SQV120N10-3m8-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQM100N04-2M7_GE3
SQM100N10-10_GE3
SQM110N05-06L_GE3
SQM110P06-8M9L_GE3
SQM120N02-1M3L_GE3
SQM120N03-1M5L_GE3
SQM120N04-1M7_GE3
SQM120N04-1M7L_GE3
SQM120N04-1M9_GE3
SQM120N06-06_GE3
SQM120N06-3M5L_GE3
SQM120N10-09_GE3
SQM120N10-3M8_GE3
SQM120P04-04L_GE3
SQM120P06-07L_GE3
SQM200N04-1M1L_GE3
SQM200N04-1M7L_GE3
SQM200N04-1M8_GE3
SQM25N15-52_GE3
SQM35N30-97_GE3
SQM40N10-30_GE3
SQM40N15-38_GE3
SQM40P10-40L_GE3
SQM47N10-24L_GE3
SQM50020EL_GE3
SQM50N04-4M0L_GE3
SQM50N04-4M1_GE3
SQM50P03-07_GE3
SQM50P04-09L_GE3
SQM50P06-15L_GE3
SQM50P08-25L_GE3
SQM60N06-15_GE3
SQM60N20-35_GE3
SQM85N15-19_GE3
SQV120N10-3m8_GE3
Revision: 28-Aug-15
1 Document Number: 67164
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQM200N04-1m1L

Automotive N-Channel MOSFET

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