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Número de pieza | SQP90P06-07L | |
Descripción | Automotive P-Channel MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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SQP90P06-07L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -10 V
RDS(on) (Ω) at VGS = -4.5 V
ID (A)
Configuration
TO-220AB
-60
0.0067
0.0088
-120
Single
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
S
G
Top View
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
P-Channel MOSFET
TO-220
SQP90P06-07L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current a
TC = 25 °C a
TC = 125 °C
ID
Continuous Source Current (Diode Conduction) a
IS
Pulsed Drain Current b
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
-60
± 20
-120
-87
-120
-480
-80
320
300
100
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square Pcb (Fr-4 material).
d. Parametric verification ongoing.
SYMBOL
RthJA
RthJC
LIMIT
40
0.5
UNIT
°C/W
S14-0585-Rev. A, 17-Mar-14
1
Document Number: 62665
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
SQP90P06-07L
Vishay Siliconix
1000
100 IDM Limited
100 μs
10 ID Limited
1 Limited by RDS(on)*
1 ms
10 ms
100 ms, 1 s, 10 s, DC
0.1 TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S14-0585-Rev. A, 17-Mar-14
5
Document Number: 62665
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SQP90P06-07L.PDF ] |
Número de pieza | Descripción | Fabricantes |
SQP90P06-07L | Automotive P-Channel MOSFET | Vishay |
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