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PDF SQP25N15-52 Data sheet ( Hoja de datos )

Número de pieza SQP25N15-52
Descripción Automotive N-Channel MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! SQP25N15-52 Hoja de datos, Descripción, Manual

www.vishay.com
SQP25N15-52
Vishay Siliconix
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
ID (A)
Configuration
Package
TO-220AB
150
0.052
25
Single
TO-220
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
• AEC-Q101 qualified d
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
D
Top View
S
D
G
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
TC = 25 °C
TC = 125 °C
ID
IS
IDM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
IAS
EAS
Maximum Power Dissipation b
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
150
± 20
25
16
50
65
30
45
107
35
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
50
1.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
S15-2048-Rev. A, 31-Aug-15
1
Document Number: 66974
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQP25N15-52 pdf
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
100
IDM Limited
10 Limited by RDS(on)*
1
SQP25N15-52
Vishay Siliconix
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1 1 10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3 10-2 10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S15-2048-Rev. A, 31-Aug-15
5
Document Number: 66974
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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