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기능 Automotive N-Channel MOSFET
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SQS484EN 데이터시트, 핀배열, 회로
www.vishay.com
SQS484EN
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
RDS(on) () at VGS = 4.5 V
ID (A)
Configuration
PowerPAK® 1212-8
40
0.009
0.01
16
Single
D
FEATURES
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Part Marking Code: Q016
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
G
S
N-Channel MOSFET
PowerPAK 1212-8
SQS484EN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Continuous Source Current (Diode Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)e, f
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
16
16
16
64
30
45
62
20
- 55 to + 175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mountc
RthJA
81
°C/W
RthJC
2.4
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S12-1860-Rev. B, 13-Aug-12
1
Document Number: 67066
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




SQS484EN pdf, 반도체, 판매, 대치품
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
ID = 16.2 A
8
6
VDS = 20 V
2.0
ID = 16.4 A
1.7
1.4
4 1.1
SQS484EN
Vishay Siliconix
VGS = 10 V
VGS = 4.5 V
2 0.8
0
0
100
5 10 15 20 25
Qg - Total Gate Charge (nC)
Gate Charge
30
0.5
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
10
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
1.2
Source Drain Diode Forward Voltage
0.5
0.1
-0.3 ID = 5 mA
-0.7
ID = 250 μA
-1.1
-1.5
-50 - 25 0
25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
0.04
0.03
0.02
TJ = 150 °C
0.01
0.00
0
TJ = 25 °C
2468
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
50
48 ID = 1 mA
46
44
42
40
38
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S12-1860-Rev. B, 13-Aug-12
4
Document Number: 67066
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQS484EN 전자부품, 판매, 대치품
www.vishay.com
Ordering Information
Vishay Siliconix
PowerPAK® 1212-8 and PowerPAK 1212-8W
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQ7414AEN
SQ7414AEN-T1-GE3
SQ7414AENW
-
SQ7415AEN
SQ7415AEN-T1-GE3
SQ7415AENW
-
SQS401EN
SQS401EN-T1-GE3
SQS401ENW
-
SQS405EN
SQS405EN-T1-GE3
SQS405ENW
-
SQS420EN
SQS420EN-T1-GE3
SQS423EN
SQS423EN-T1-GE3
SQS460EN
SQS460EN-T1-GE3
SQS462EN
SQS462EN-T1-GE3
SQS482EN
SQS482EN-T1-GE3
SQS484EN
SQS484EN-T1-GE3
SQS490EN
SQS490EN-T1-GE3
SQS840EN
SQS840EN-T1-GE3
SQS850EN
SQS850EN-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ7414AEN-T1_GE3
SQ7414AENW-T1_GE3
SQ7415AEN-T1_GE3
SQ7415AENW-T1_GE3
SQS401EN-T1_GE3
SQS401ENW-T1_GE3
SQS405EN-T1_GE3
SQS405ENW-T1_GE3
SQS420EN-T1_GE3
SQS423EN-T1_GE3
SQS460EN-T1_GE3
SQS462EN-T1_GE3
SQS482EN-T1_GE3
SQS484EN-T1_GE3
SQS490EN-T1_GE3
SQS840EN-T1_GE3
SQS850EN-T1_GE3
Revision: 25-Aug-15
1 Document Number: 66697
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SQS484EN

Automotive N-Channel MOSFET

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