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부품번호 | SQ7415AENW 기능 |
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기능 | Automotive P-Channel MOSFET | ||
제조업체 | Vishay | ||
로고 | |||
전체 8 페이지수
www.vishay.com
SQ7415AENW
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = -10 V
RDS(on) (Ω) at VGS = -4.5 V
ID (A)
Configuration
Package
-60
0.065
0.090
-16
Single
PowerPAK 1212-8W
PowerPAK® 1212-8W Single
D
D
D
6
D
7
8
5
FEATURES
• TrenchFET® power MOSFET
• Low thermal resistance PowerPAK® 1212-8W
package with 1.07 mm profile
• AEC-Q101 qualified
• Wettable flank terminals
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
3.3 mm
1
Top View
3.3 mm
1
4
3
S
2
S
S
G
Bottom View
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
TC = 25 °C a
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
-60
± 20
-16
-11
-16
-64
-23
26
53
17
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
RthJA
RthJC
81
2.8
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
UNIT
°C/W
S15-2138, Rev. A, 14-Sep-15
1
Document Number: 76598
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.5
8 ID = 5.7 A
VDS = 30 V
ID = 5.7 A
2.1
6 1.7
4 1.3
SQ7415AENW
Vishay Siliconix
VGS = 10 V
VGS = 4.5 V
2 0.9
0
0
1.0
5 10 15 20 25
Qg - Total Gate Charge (nC)
Gate Charge
30
0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
100
0.7
0.4
0.1
- 0.2
ID = 250 μA
ID = 5 mA
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
- 0.5
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
0.5
0.4
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source Drain Diode Forward Voltage
1.2
- 60
ID = 1 mA
- 64
0.3 - 68
0.2 - 72
TJ = 150 °C
0.1 - 76
TJ = 25 °C
0.0
0 2 4 6 8 10
- 80
- 50 - 25 0 25 50 75 100 125 150 175
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S15-2138, Rev. A, 14-Sep-15
4
Document Number: 76598
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 www.vishay.com
Ordering Information
Vishay Siliconix
PowerPAK® 1212-8 and PowerPAK 1212-8W
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
SQ7414AEN
SQ7414AEN-T1-GE3
SQ7414AENW
-
SQ7415AEN
SQ7415AEN-T1-GE3
SQ7415AENW
-
SQS401EN
SQS401EN-T1-GE3
SQS401ENW
-
SQS405EN
SQS405EN-T1-GE3
SQS405ENW
-
SQS420EN
SQS420EN-T1-GE3
SQS423EN
SQS423EN-T1-GE3
SQS460EN
SQS460EN-T1-GE3
SQS462EN
SQS462EN-T1-GE3
SQS482EN
SQS482EN-T1-GE3
SQS484EN
SQS484EN-T1-GE3
SQS490EN
SQS490EN-T1-GE3
SQS840EN
SQS840EN-T1-GE3
SQS850EN
SQS850EN-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
NEW ORDERING CODE
SQ7414AEN-T1_GE3
SQ7414AENW-T1_GE3
SQ7415AEN-T1_GE3
SQ7415AENW-T1_GE3
SQS401EN-T1_GE3
SQS401ENW-T1_GE3
SQS405EN-T1_GE3
SQS405ENW-T1_GE3
SQS420EN-T1_GE3
SQS423EN-T1_GE3
SQS460EN-T1_GE3
SQS462EN-T1_GE3
SQS482EN-T1_GE3
SQS484EN-T1_GE3
SQS490EN-T1_GE3
SQS840EN-T1_GE3
SQS850EN-T1_GE3
Revision: 25-Aug-15
1 Document Number: 66697
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
SQ7415AEN | Automotive P-Channel MOSFET | Vishay |
SQ7415AENW | Automotive P-Channel MOSFET | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |