PDF SQS401ENW Data sheet ( Hoja de datos )

Número de pieza	SQS401ENW
Descripción	Automotive P-Channel MOSFET
Fabricantes	Vishay
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No Preview Available ! www.vishay.com SQS401ENW Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) Configuration Package -40 0.029 0.047 -16 Single PowerPAK 1212-8W PowerPAK® 1212-8W Single D D D 6 D 7 8 5 FEATURES • TrenchFET® power MOSFET • AEC-Q101 qualified d • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S G 3.3 mm 1 Top View 3.3 mm Marking Code: Q023 1 4 3 S 2 S S G Bottom View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current a Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TC = 125 °C L = 0.1 mH ID IS IDM IAS EAS Maximum Power Dissipation b Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) e, f TC = 25 °C TC = 125 °C PD TJ, Tstg LIMIT -40 ± 20 -16 -16 -16 -64 -26 33.8 62.5 20 -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL RthJA RthJC LIMIT 81 2.4 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-1309-Rev. A, 09-Jun-15 1 Document Number: 67977 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 page www.vishay.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 IDM Limited 100 ID Limited 10 Limited by RDS(on)* 1 100 μs 1 ms 10 ms 100 ms, 1 s, 10 s, DC BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area SQS401ENW Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 100 1000 S15-1309-Rev. A, 09-Jun-15 5 Document Number: 67977 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 Page

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