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PDF 1SV262 Data sheet ( Hoja de datos )
| Número de pieza | 1SV262 | |
| Descripción | VARIABLE CAPACITANCE DIODE (CATV TUNING) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV262
1SV262
CATV Tuning
Unit: mm
• High capacitance ratio: C2 V/C25 V = 12.5 (typ.)
• Low series resistance: rs = 0.6 Ω (typ.)
• Excellent C-V characteristics, and small tracking error.
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
VR
VRM
Tj
Tstg
34
36 (RL = 10 kΩ)
125
−55~125
V
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Capacitance ratio
Series resistance
VR IR = 1 μA
IR VR = 32 V
C2 V
VR = 2 V, f = 1 MHz
C25 V
VR = 25 V, f = 1 MHz
C2 V/C25 V
⎯
C25 V/C28 V
⎯
rs VR = 5 V, f = 470 MHz
Note 1: Available in matched group for capacitance to 2.0%.
C (max) − C (min)
C (min)
<= 0.02 (VR = 2~25 V)
Min Typ. Max Unit
34
⎯
33
2.6
12.0
1.03
⎯
⎯
⎯
35.5
2.85
12.5
⎯
0.6
⎯
10
38
3.0
⎯
⎯
0.8
V
nA
pF
pF
⎯
⎯
Ω
Marking
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SV262.PDF ] | |
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