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Número de pieza | SQ7414AENW | |
Descripción | Automotive N-Channel MOSFET | |
Fabricantes | Vishay | |
Logotipo | ||
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SQ7414AENW
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) at VGS = 10 V
RDS(on) (Ω) at VGS = 4.5 V
ID (A)
Configuration
60
0.023
0.028
18
Single
PowerPAK® 1212-8W Single
D
D
D
6
D
7
8
5
FEATURES
• TrenchFET® power MOSFET
• Low thermal resistance PowerPAK® 1212-8
package with 1.07 mm profile
• PWM optimized
• 100 % Rg and UIS tested
• AEC-Q101 qualified
• Wettable flank terminals
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
3.3 mm
1
Top View
3.3 mm
Marking Code: Q020
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
1
4
3
S
2
S
S
G
Bottom View
G
N-Channel MOSFET
S
PowerPAK 1212-8W
SQ7414AENW-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Continuous Source Current (Diode Conduction) a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
TC = 25 °C
TC = 125 °C
L = 0.1 mH
TC = 25 °C
TC = 125 °C
VDS
VGS
ID
IS
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
60
± 20
18
18
18
72
20
16
62
20
-55 to +175
260
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount c
SYMBOL
RthJA
RthJC
LIMIT
81
2.4
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
UNIT
°C/W
S15-0940-Rev. B, 04-May-15
1
Document Number: 62980
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
10 IDM Limited
ID Limited
1
Limited by RDS(on)*
SQ7414AENW
Vishay Siliconix
100 μs
1 ms
10 ms
100 ms, 1 s, 10 s, DC
1
Duty Cycle = 0.5
0.1
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.01 0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
100
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
S15-0940-Rev. B, 04-May-15
5
Document Number: 62980
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet SQ7414AENW.PDF ] |
Número de pieza | Descripción | Fabricantes |
SQ7414AEN | Automotive N-Channel MOSFET | Vishay |
SQ7414AENW | Automotive N-Channel MOSFET | Vishay |
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