(PDF) 1SV276 Datasheet - VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)

Número de pieza	1SV276
Descripción	VARIABLE CAPACITANCE DIODE (VCO FOR UHF BAND RADIO)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio · High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C 1SV276 Unit: mm Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C1 V C4 V C1 V/C4 V rs IR = 1 mA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Marking JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Min Typ. Max Unit 10 ¾ ¾ ¾¾ 3 15 16 17 7.0 8.0 8.5 1.8 2.0 ¾ ¾ 0.22 0.4 V nA pF pF ¾ W 1 2003-04-02 1 page

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PDF 1SV276 Data sheet ( Hoja de datos )