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PDF DTC115EE Data sheet ( Hoja de datos )
| Número de pieza | DTC115EE | |
| Descripción | Digital Transistors | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de DTC115EE (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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MUN2236, MMUN2236L,
MUN5236, DTC115EE,
DTC115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
PIN CONNECTIONS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
SOT−723
CASE 631AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 2
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
DTC115E/D
1 page  
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
TYPICAL CHARACTERISTICS
MUN2236, MMUN2236L, MUN5236, NSVMUN5236, DTC115EE, DTC115EM3
1
IC/IB = 10
0.1
TA = −25°C
25°C
75°C
1000
VCE = 10 V
100
75°C
25°C
TA = −25°C
0.01
0
5 10 15 20 25 30 35
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
40
10
0.1
1 10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
lE = 0 A
TA = 25°C
100
10
75°C
25°C
TA = −25°C
10 20 30 40
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
1
VO = 5 V
0.1
50 0 5 10 15 20 25 30 35 40
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
5 10 15 20 25 30
IC, COLLECTOR CURRENT (mA)
35
Figure 6. Input Voltage versus Output Current
http://onsemi.com
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| PDF Descargar | [ Datasheet DTC115EE.PDF ] | |
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