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DTC115EM3 데이터시트 PDF




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DTC115EM3 데이터시트, 핀배열, 회로
MUN2236, MMUN2236L,
MUN5236, DTC115EE,
DTC115EM3
Digital Transistors (BRT)
R1 = 100 kW, R2 = 100 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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PIN CONNECTIONS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
SOT723
CASE 631AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
© Semiconductor Components Industries, LLC, 2013
February, 2013 Rev. 2
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
DTC115E/D




DTC115EM3 pdf, 반도체, 판매, 대치품
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
− − 0.05
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
CollectorEmitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 5.0 mA, VCE = 10 V)
hFE
80 150
CollectorEmitter Saturation Voltage (Note 3)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Input Voltage (on)
(VCE = 0.3 V, IC = 1.0 mA)
Vi(off)
Vi(on)
1.2 0.5
3.0 1.7
Output Voltage (on)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
VOL
− − 0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9
Input Resistor
R1 70 100 130
Resistor Ratio
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
R1/R2
0.8 1.0 1.2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
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DTC115EM3 전자부품, 판매, 대치품
MUN2236, MMUN2236L, MUN5236, DTC115EE, DTC115EM3
PACKAGE DIMENSIONS
E
A
A1
D
3
12
e
HE
b
SOT23 (TO236)
CASE 31808
ISSUE AP
SEE VIEW C
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN
NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.10
0.20
0.30
L1 0.35
0.54
0.69
H E 2.10
2.40
2.64
q 0° −−− 10°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
ǒ ǓSCALE 10:1
mm
inches
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