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PDF IRFP4868PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4868PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRFP4868PbF
VDSS
RDS(on) typ.
max.
ID
300V
25.5m
32m
70A
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Base Part Number
IRFP4868PbF
Package Type
TO-247AC
G
Gate
D
D
Drain
S
D
G
TO-247AC
S
Source
Standard Pack
Form
Tube
Quantity
25
Orderable Part Number
IRFP4868PbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ
TSTG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
RJC
RCS
RJA
Symbol
Parameter
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Max.
70
49
280
517
3.4
± 20
-55 to + 175
300
10lbfin (1.1Nm)
1093
See Fig. 14, 15, 22a, 22b
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2012 International Rectifier
October 30, 2012
1 page  
1
IRFP4868PbF
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100 Duty Cycle = Single Pulse
10 0.05
0.10
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Typical Avalanche Current vs. Pulsewidth
1.0E-01
1200
1000
800
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 42A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature
far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 www.irf.com © 2012 International Rectifier
October 30, 2012
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFP4868PBF.PDF ] | |
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