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부품번호 | IRFP7530PBF 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRFP7530PbF
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
1.65m
G
max
2.00m
ID (Silicon Limited)
281A
S
ID (Package Limited)
195A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
G DS
TO-247
IRFP7530PbF
D
Drain
S
Source
Base part number Package Type
IRFP7530PbF
TO-247
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP7530PbF
7
ID = 100A
6
5
4
TJ = 125°C
3
2 TJ = 25°C
1
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
300
250 Limited by package
200
150
100
50
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 7, 2014
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
1
0.1
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 3. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
2
VDS = 25V
60µs PULSE WIDTH
3456
VGS, Gate-to-Source Voltage (V)
7
Fig 5. Typical Transfer Characteristics
1000000
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
1000
Ciss
Coss
Crss
100
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4 www.irf.com © 2014 International Rectifier
1000
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
IRFP7530PbF
4.5V
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 4. Typical Output Characteristics
2.4
ID = 100A
2.0 VGS = 10V
1.6
1.2
0.8
0.4
-60
-20 20 60 100 140
TJ , Junction Temperature (°C)
180
Fig 6. Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
ID = 100A
VDS= 48V
VDS= 30V
VDS= 12V
8.0
6.0
4.0
2.0
0.0
0
50 100 150 200 250 300 350
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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November 7, 2014
4페이지 IRFP7530PbF
4.5
4.0
3.5
3.0
2.5
2.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
1.5
20
IF = 60A
VR = 51V
15 TJ = 25°C
TJ = 125°C
10
5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 17. Threshold Voltage vs. Temperature
20
IF = 100A
VR = 51V
15 TJ = 25°C
TJ = 125°C
10
5
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
0
0 200 400 600 800 1000
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
450
400
IF = 60A
VR = 51V
350 TJ = 25°C
TJ = 125°C
300
250
200
150
100
50
0
200 400 600 800 1000
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
400
IF = 100A
350 VR = 51V
TJ = 25°C
300 TJ = 125°C
250
200
150
100
50
0
200 400 600 800 1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7 www.irf.com © 2014 International Rectifier
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November 7, 2014
7페이지 | |||
구 성 | 총 10 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IRFP7530PBF | Power MOSFET ( Transistor ) | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |