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PDF PBSS4350SS Data sheet ( Hoja de datos )
| Número de pieza | PBSS4350SS | |
| Descripción | transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
NPN/NPN double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
NXP
PBSS4350SS SOT96-1
Name
SO8
NPN/PNP
complement
PBSS4350SPN
PNP/PNP
complement
PBSS5350SS
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = 2 A;
IB = 200 mA
Min Typ Max
Unit
- - 50 V
- - 2.7 A
--5
A
[1] -
90 130 mΩ
1 page  
NXP Semiconductors
PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa810
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
103 006aaa811
Zth(j-a)
(K/W)
duty cycle =
102
1.0
0.75
0.5
0.33
0.2
10 0.1
0.05
0.02
0.01
0
1
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBSS4350SS_1
Product data sheet
Rev. 01 — 3 April 2007
© NXP B.V. 2007. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
11. Soldering
PBSS4350SS
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor
5.50
0.60 (8×)
1.30
4.00 6.60 7.00
1.27 (6×)
solder lands
occupied area
placement accuracy ± 0.25
Dimensions in mm
Fig 16. Reflow soldering footprint SOT96-1 (SO8)
0.60 (6×)
1.20 (2×)
0.3 (2×)
enlarged solder land
1.30
4.00 6.60 7.00
sot096-1_fr
1.27 (6×)
5.50
board direction
solder lands
occupied area
solder resist
placement accurracy ± 0.25
Dimensions in mm
Fig 17. Wave soldering footprint SOT96-1 (SO8)
sot096-1_fw
PBSS4350SS_1
Product data sheet
Rev. 01 — 3 April 2007
© NXP B.V. 2007. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS4350SS.PDF ] | |
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