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PDF PBSS5240X Data sheet ( Hoja de datos )
| Número de pieza | PBSS5240X | |
| Descripción | transistor | |
| Fabricantes | NXP Semiconductors | |
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PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
19 October 2012
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:
PBSS4240X.
1.2 Features and benefits
• Low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High efficiency due to less heat generation
1.3 Applications
• DC-to-DC conversion
• Supply line switching
• Battery charger
• LCD backlighting
• Driver in low supply voltage applications (e.g. lamps and LEDs)
• Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
ICRM
Quick reference data
Parameter
Conditions
collector-emitter
voltage
open base
collector current
peak collector current
collector-emitter
saturation resistance
repetitive peak
collector current
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
tp ≤ 20 ms; δ ≤ 0.33 ; pulsed
Min Typ Max Unit
- - -40 V
- - -2 A
- - -3 A
- - 310 mΩ
- - -2.5 A
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NXP Semiconductors
PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
1
0
0.02
0.01
006aac682
10- 1
10- 5
10- 4
10- 3
10- 2
FR4 PCB, mounting pad for collector 6 cm2
10- 1
1
10 102 103
tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
ICBO
ICEO
IEBO
hFE
VCEsat
RCEsat
Characteristics
Parameter
Conditions
collector-base cut-off
current
VCB = -40 V; IE = 0 A; Tamb = 25 °C
VCB = -40 V; IE = 0 A; Tj = 150 °C
collector-emitter cut-off VCE = -30 V; IB = 0 A; Tamb = 25 °C
current
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
DC current gain
VCE = -5 V; IC = -1 mA; Tamb = 25 °C
VCE = -5 V; IC = -500 mA; Tamb = 25 °C
VCE = -5 V; IC = -1 A; Tamb = 25 °C
VCE = -5 V; IC = -2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
collector-emitter
saturation voltage
IC = -100 mA; IB = -5 mA; Tamb = 25 °C
IC = -500 mA; IB = -50 mA;
Tamb = 25 °C
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
IC = -2 A; IB = -200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
collector-emitter
saturation resistance
IC = -1 A; IB = -100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
PBSS5240X
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 October 2012
Min Typ Max Unit
- - -100 nA
- - -50 µA
- - -100 nA
- - -100 nA
300 -
215 -
145 -
55 -
-
-
-
-
- - -140 mV
- - -170 mV
- - -310 mV
- - -630 mV
- - 310 mΩ
© NXP B.V. 2012. All rights reserved
5 / 12
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NXP Semiconductors
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
11.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
PBSS5240X
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 October 2012
© NXP B.V. 2012. All rights reserved
11 / 12
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