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PDF 12T Data sheet ( Hoja de datos )
| Número de pieza | 12T | |
| Descripción | TRIACs | |
| Fabricantes | nELL | |
| Logotipo |  |
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SEMICONDUCTOR
12T Series RRooHHSS
TRIACs, 12A
Snubberless, Logic Level and Standard
FEATURES
Medium current triac
Low thermal resistance with clip bonding
Low thermal resistance insulation ceramic
for insulated TO-220AB package
High commutation (4Q) or very high
commutation (3Q) capability
12T series are UL certified (File ref: E320098)
Packages are RoHS compliant
APPLICATIONS
ON/OFF or phase angle function in applications
such as static relays, light dimmers and appliance
motors speed controllers.
The snubberless versions (with suffix W) are
especially recommended for use on inductive loads,
because of their high commutation performances.
The 12T series provides an insulated tab (rated at
2500VRMS).
MAIN FEATURES
SYMBOL
IT(RMS)
VDRM/VRRM
IGT(Q1)
VALUE
12
600 to 1000
5 to 50
UNIT
A
V
mA
A2
A1
A2G
TO-220AB (non-Insulated)
(12TxxA)
12 3
TO-220AB (lnsulated)
(12TxxAI)
A2
A1 A2
G
TO-263 (D2PAK)
(12TxxH)
TO-220F(ITO-220AB)
(12TxxAF)
2(A2)
3(G)
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current (full sine wave) IT(RMS)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PG(AV)
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated/TO-220F (ITO-220AB)
F =50 Hz
F =60 Hz
tp = 10 ms
F =100 Hz
Tp =20 µs
Tj =125ºC
Tc = 105ºC
Tc = 90ºC
t = 20 ms
t = 16.7 ms
Tj =125ºC
Tj =125ºC
VALUE UNIT
12 A
120
A
126
72 A2s
50 A/µs
4A
1W
- 40 to + 150
ºC
- 40 to + 125
www.nellsemi.com
Page 1 of 7
1 page  
SEMICONDUCTOR
12T Series RRooHHSS
Fig.5 On-state characteristics (maximum values).
Fig.6 Surge peak on-state current versus number
of cycles.
I (A)
100
Tj max.
Vto = 0.85 V
Rd = 35 mΩ
Tj=Tj max
10
Tj=25°C
VTM(V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
ITSM (A)
130
120
110
100
90
80
70
60 Repetitive
50 Tc=90°C
40
30
20
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l2t.
lTSM (A), l2t(A2s)
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
100 I2t
10
0.01
0.10
tp (ms)
1.00
10.00
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
lGT,lH,lL[Tj] / lGT,lH,lL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
Fig.10 Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.8
2.4
2.0
C
1.6 B
1.2
SW
0.8
0.4
0.0
0.1
(dV/dt)c (V/µs)
1.0 10.0
CW/BW
100.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
5.0
4.5
4.0 TW
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
(dV/dt)c (V/µs)
1.0 10.0
100.0
www.nellsemi.com
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 12T.PDF ] | |
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